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    T 1500 N14 TOF Search Results

    T 1500 N14 TOF Result Highlights (5)

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    T 1500 N14 TOF Price and Stock

    Infineon Technologies AG T1500N14TOFVTXPSA1

    SCR MODULE 1800V 3500A DO200AC
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    T 1500 N14 TOF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T1500N14TOF Eupec 1.4kV V[drm] Max., 1.5kA I[T] Max. Silicon Controlled Rectifier Scan PDF
    T1500N14TOFVTXPSA1 Infineon Technologies Discrete Semiconductor Products - Thyristors - SCRs - Modules - SCR MODULE 1800V 3500A DO200AC Original PDF

    T 1500 N14 TOF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75329D3, HUF75329D3S 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2 PDF

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334 PDF

    75329d

    Abstract: TA75329 HUF75329D3
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75329D3, HUF75329D3S TA7532HERM2 98e-2 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 75329d TA75329 HUF75329D3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75344G3, HUF75344P3, HUF75344S3S 32e-3 52e-2 41e-1 13e-1 83e-2 HUF75344 15e-3 PDF

    75339p

    Abstract: TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S 97e-2 HUF75339 00e-3 90e-2 95e-3 95e-2 75339p TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 PDF

    76132P

    Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
    Text: HUF76132P3, HUF76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology


    Original     		HUF76132P3, HUF76132S3S HUF76 132P3, 132S3S low30V, 51e-2 03e-2 05e-2 76132P HUF76132P3 HUF76132S3S HUF76132S3ST TB334 PDF

    TB370

    Abstract: No abstract text available
    Text: ITF87056DQT TM Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 File Number 4813.3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V


    Original     		ITF87056DQT TB370 PDF

    AN7254

    Abstract: AN7260 ITF87056DQT ITF87056DQT2 TB370 625o 67e4
    Text: ITF87056DQT Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 File Number 4813.2 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V


    Original     		ITF87056DQT AN7254 AN7260 ITF87056DQT ITF87056DQT2 TB370 625o 67e4 PDF

    75344g

    Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334 PDF

    TB370

    Abstract: 67e4 AN7254 AN7260 ITF87056DQT ITF87056DQT2 n2 6346
    Text: ITF87056DQT Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V • 2.5V Gate Drive Capability


    Original     		ITF87056DQT TB370 67e4 AN7254 AN7260 ITF87056DQT ITF87056DQT2 n2 6346 PDF

    75339P

    Abstract: TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S 43ucts 75339P TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 PDF

    75329p

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 PDF

    75329D

    Abstract: AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329D3, HUF75329D3S 75329D AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1 PDF

    75344G

    Abstract: No abstract text available
    Text: HUFA75344G3, HUFA75344P3, HUFA75344S3S TM Data Sheet November 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75344G3, HUFA75344P3, HUFA75344S3S 75344G PDF

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75329D3, HUFA75329D3S PDF

    75333P

    Abstract: HUF75333G3 HUF75333P3 HUF75333S3S HUF75333S3ST TA75333 TB334
    Text: HUF75333G3, HUF75333P3, HUF75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75333G3, HUF75333P3, HUF75333S3S HUF75333 HUF75333S3S 75333P HUF75333G3 HUF75333P3 HUF75333S3ST TA75333 TB334 PDF

    75329D

    Abstract: HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329D3, HUF75329D3S 71e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2 75329D HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334 PDF

    75333p

    Abstract: MOSfet 4362 HUF75333G3 diode 66a TA75333 HUF75333P3 HUF75333S3S HUF75333S3ST TB334
    Text: HUF75333G3, HUF75333P3, HUF75333S3S Data Sheet June 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75333G3, HUF75333P3, HUF75333S3S 43ucts 75333p MOSfet 4362 HUF75333G3 diode 66a TA75333 HUF75333P3 HUF75333S3S HUF75333S3ST TB334 PDF

    relay rs-5

    Abstract: AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3
    Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HRFZ44N relay rs-5 AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUFA75639S3R4851 TM Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		HUFA75639S3R4851 PDF

    AN7254

    Abstract: AN7260 ITF87056DQT ITF87056DQT2 TB370
    Text: ITF87056DQT Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 File Number 4813.3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V


    Original     		ITF87056DQT AN7254 AN7260 ITF87056DQT ITF87056DQT2 TB370 PDF

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334 PDF

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 PDF