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    50N120 Price and Stock

    STMicroelectronics SCT50N120

    SICFET N-CH 1200V 65A HIP247
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    DigiKey SCT50N120 Tube 594 1
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    Infineon Technologies AG IKQ50N120CH3XKSA1

    IGBT 1200V 100A TO247-3
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    DigiKey IKQ50N120CH3XKSA1 Tube 472 1
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    Newark IKQ50N120CH3XKSA1 Bulk 230 1
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    TME IKQ50N120CH3XKSA1 1
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    STMicroelectronics SCTWA50N120

    SICFET N-CH 1200V 65A HIP247
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    DigiKey SCTWA50N120 Tube 378 1
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    Avnet Americas SCTWA50N120 Tube 282 32 Weeks 30
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    STMicroelectronics SCTWA50N120 1
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    TME SCTWA50N120 1
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    Avnet Silica SCTWA50N120 600 17 Weeks 30
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    IXYS Corporation IXYH50N120C3D1

    IGBT 1200V 90A TO247
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    DigiKey IXYH50N120C3D1 Tube 360 1
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    Mouser Electronics IXYH50N120C3D1 539
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    TME IXYH50N120C3D1 297 1
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    IXYS Corporation IXYH50N120C3

    IGBT 1200V 100A TO247
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    DigiKey IXYH50N120C3 Tube 298 1
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    Mouser Electronics IXYH50N120C3 240
    • 1 $10.86
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    TTI IXYH50N120C3 Tube 300 30
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    TME IXYH50N120C3 1
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    Find more 50N120 price and stock on Findchips.com

    50N120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    50N120AU1 IXYS High Voltage IGBT With Diode, Short Circuit SOA Capability Original PDF

    50N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N120D1

    Abstract: No abstract text available
    Text: Advance Technical Information NPT3 High Voltage IGBT with Diode VCES IC25 VCE sat tfi IXEX 50N120D1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original     		PDF 50N120D1 O-247TM 728B1 123B1 065B1 50N120D1

    50N100

    Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
    Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol


    Original     		PDF 50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623

    IXLN50N120A

    Abstract: No abstract text available
    Text: IGBT IXLN 50N120A VCES IC25 VCE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V Transient


    Original     		PDF 50N120A IXLN50N120A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXRH 50N60 VCES = 600/1200 V IXRH 50N120 IC90 = 50 A High Voltage RBIGBT Forward and Reverse Blocking IGBT VCE sat = 2.6 V tfi = 300 ns N-Channel, Enhancement Mode C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Conditions


    Original     		PDF 50N60 50N120 O-247 D-68623

    50N120AU1

    Abstract: IXDN 50N120AU1 IXDN50N120AU1 V50017
    Text: High Voltage IGBT with Diode IXDN 50N120AU1 C Short Circuit SOA Capability VCES = 1200 V IC25 = 70 A VCE sat typ = 2.5 V G Preliminary Data E E Maximum Ratings miniBLOC, SOT-227 B E153432 Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 50N120AU1 OT-227 E153432 50N120AU1 IXDN 50N120AU1 IXDN50N120AU1 V50017

    100N120

    Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
    Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 50N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50


    Original     		PDF 15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352

    40N120

    Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
    Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623

    Untitled

    Abstract: No abstract text available
    Text: 50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTB50N120FL2WG NGTB50N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: 50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTB50N120FL2WG NGTB50N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: r IXLN 50N120A IGBT VCES I C25 V CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability ?c G r 1 c m 1 mi ic u y u c u a È T ' e Maximum Ratings Symbol Test Conditions V CES Tj V CGR T, = 25°C to 150°C; RGE = 1 M ii V GES 1200 V 1200 V Continuous


    OCR Scan     		PDF 50N120A 4bab22b

    IXLN50N120A

    Abstract: No abstract text available
    Text: OIXYS IGBT IXLN 50N120A v¥ ces ^C25 vv CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data ° Symbol Test C onditions Maximum Ratings v CES ^ V CGR T,J = 25°C to 150°C; Rrc = 1 M ii Cat V GES 1200 V 1200 V Continuous +20 V


    OCR Scan     		PDF 50N120A OT-227 IXLN50N120A

    jvv diode

    Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N
    Text: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 50N120AU1 OT-227 jvv diode IXDN 50N120AU1 IXDN50N120AU1 0504N

    M232

    Abstract: QGQ505L pu200 Rg241
    Text: 2 Pack IGBT 2im 50N-120 S älL e IGBT MODULE N series -gv* n Outline Drawing n Features •S q u a re R BSO A • L o w S aturation Voltage •L e s s Total P o w e r D issip atio n •Im p ro v e d FW D C ha ra cte ristic •M in im iz e d in te rn a l S tra y In du cta nce


    OCR Scan     		PDF 125-C Eoff25 D-60528 M232 QGQ505L pu200 Rg241

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan     		PDF 20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

    1V110

    Abstract: inverter P VnF-10
    Text: 7 in 1 IGBT 1200 V 50 A F U JI SUM öTGSOE IGBT MODULE N series n Features • Including Brake Chopper n Absolute Maximum Ratings ( t c=2 5 °c) Items Collector-Em itter Voltage Gate -E m itter Voltage (1) r 0» > n Outline Drawing Symbols V g es lc Collector Current


    OCR Scan     		PDF tp125 Tp125Â 1V110 inverter P VnF-10

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


    OCR Scan     		PDF 2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50

    b14 smd diode

    Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
    Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60


    OCR Scan     		PDF T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60