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    BF996 Search Results

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    BF996 Price and Stock

    NXP Semiconductors BF996S,215

    RF MOSFET 15V SOT143B
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    DigiKey BF996S,215 Reel
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    Philips Semiconductors BF996S

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    Bristol Electronics BF996S 650
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    Quest Components BF996S 520
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    Vishay Intertechnologies BF996SAGS08

    N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE, DEPLETION MODE RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA BF996SAGS08 109
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    Others BF996SE6327

    INSTOCK
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    Chip 1 Exchange BF996SE6327 3,000
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    BF996 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BF996 Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF996 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF996 Siemens Components for Surface Mounting 1983/4 Scan PDF
    BF996 Telefunken Electronic N-Channel Dual Gate MOS Field Effect Tetrode - Depletion Mode Scan PDF
    BF996R Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996R Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996R Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF 996 S Infineon Technologies TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF996S NXP Semiconductors BF996S - N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 15 mS Original PDF
    BF996S Philips Semiconductors N-channel dual-gate MOS-FET Original PDF
    BF996S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF996S Siemens Cross Reference Guide 1998 Original PDF
    BF996S Siemens Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Original PDF
    BF996S Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF996S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF996S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BF996 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original     		PDF BF996S BF996S D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BF996SR Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)17 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.


    Original     		PDF BF996SR

    Untitled

    Abstract: No abstract text available
    Text: BF996 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ Thermal Resistance Junc-Amb.


    Original     		PDF BF996

    BF996S

    Abstract: GPS25 829 Tetrode
    Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range


    Original     		PDF BF996S BF996S 30the D-74025 17-Apr-96 GPS25 829 Tetrode

    Untitled

    Abstract: No abstract text available
    Text: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S OT-143 D-74025 20-Aug-04

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		PDF BF996S OT143 R77/02/pp8

    BF996S

    Abstract: No abstract text available
    Text: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S OT-143 D-74025 30-Aug-04 BF996S

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143

    marking code cig

    Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143 marking code cig fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143

    Untitled

    Abstract: No abstract text available
    Text: BF996S Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.480


    Original     		PDF BF996S

    BF996S

    Abstract: marking code cig dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143 R77/02/pp8 BF996S marking code cig dual-gate

    BF996S

    Abstract: No abstract text available
    Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05 BF996S

    BF996S

    Abstract: BF996SA BF996SB
    Text: BF996S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original     		PDF BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB

    fet MARKING MHp

    Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
    Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and


    OCR Scan     		PDF BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S

    Q03407

    Abstract: No abstract text available
    Text: BF996S PHILIPS INTERNATIONAL SbE D 711002b Q03407Ö • PHIN F O R D E T A I L E D IN F O R M A T IO N S E E T H E L A T E S T IS S U E O F H A N D B O O K S C 0 7 O R D A T A S H E E T T - 3 5 -2 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and


    OCR Scan     		PDF BF996S 711002b Q03407Ö Q03407

    BF996

    Abstract: BF 996 S BF996S
    Text: Tem ic BF996S Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode £ Applications Electrostatic sensitive device. Observe precautions for handling. *' Input and mixer stages in UHF tuner. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF996S BF996S 03-Mar-97 BF996 BF 996 S

    marking code 11G1

    Abstract: No abstract text available
    Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.


    OCR Scan     		PDF 0DE4750 BF996S OT143 marking code 11G1

    BF996S

    Abstract: marking ANs
    Text: VllDÖSt. □□L.&Tlb EflQ IPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tran sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.


    OCR Scan     		PDF 7110fl2ti BF996S OT143 BF996S marking ANs

    Untitled

    Abstract: No abstract text available
    Text: 7 UDÖEL. QDt.a?lb EflO HIPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D ep letio n ty p e fie ld -e ffe c t transistor in a plastic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.


    OCR Scan     		PDF BF996S

    BF996

    Abstract: No abstract text available
    Text: _ _ :_ _u _ N A PIER PHILIPS/DISCRETE ^53=131 0013014 T • BF996 OLE D _JC SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate interconnected, intended for u.h.f. applications, such as television tuners and professional communi­


    OCR Scan     		PDF BF996 BF996

    BF996

    Abstract: marking BS marking BS mosfet
    Text: - v . - - '_-—_ N AMER PHILIP S/ DIS CRETE übE D WÊ :_ ^53^31 l i _i _ 0D13D14 T BF996 A ' T -s i-a .s -' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate


    OCR Scan     		PDF 0D13D14 BF996 200MHz BF996 marking BS marking BS mosfet

    buz90af

    Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
    Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391


    OCR Scan     		PDF 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163

    Untitled

    Abstract: No abstract text available
    Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.


    OCR Scan     		PDF BF996S OT143