b4574
Abstract: B39221-B4574-Z910 QCC12B SAW Components Bandpass Filter
Text: SAW Components Bandpass Filter B4574 215,0 MHz Preliminary Data Ceramic package QCC12B Features ● Low-loss IF filter for mobile telephone ● Channel selection in GSM, PCN, PCS systems ● Ceramic SMD package Terminals ● Gold-plated Ni Dimensions in mm, approx. weight 0,2 g
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B4574
QCC12B
B39221-B4574-Z910
C61157-A7-A48
F61074-V8038-Z000
b4574
B39221-B4574-Z910
QCC12B
SAW Components Bandpass Filter
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BB-B4574
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BB-B4574 SINCE 1981 ● Features: ●Package dimensions 1. Chip material: GaAsP/GaP 5.0 .197 2. Emitted color : Hi-Eff Red 3. Lens Appearance : Red Diffused 4. Pulse Rate 2.4 Hz (VDD=5V) 5. Operating Voltage：3V~12V (DC) 6. Easily be driven by TTL & C-MOS
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BB-B4574
BB-B4574
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BB-B4574 Features: Package dimensions 1. Chip material: GaAsP/GaP 5.0 .197 2. Emitted color : Hi-Eff Red 3. Lens Appearance : Red Diffused 4. Pulse Rate 2.4 Hz (VDD=5V) 5. Operating Voltage 3V~12V (DC) 8.6(.339) 1.0(.04)
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BB-B4574
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siemens B4203
Abstract: B4570 Siemens ofw b4677 siemens saw filters QCC8B DCC-14 QCC12B QCC10B B4209
Text: Siemens Matsushita Components RF Filters for Cellular Phone Center Frequency MHz Type 1,5 dB Insertion Bandwidth Attenuation MHz dB Package Application 836,5 836,5 B4657 B4681 30,0 31,0 2,8 2,3 DCC6 DCC6 AMPS Tx AMPS Tx 836,5 836,5 B4690 B4111 31,0 30,0 3,0
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B4657
B4681
B4690
B4111
B4660
B4658
B4682
B4691
B4677
B4687
siemens B4203
B4570
Siemens ofw
b4677
siemens saw filters
QCC8B
DCC-14
QCC12B
QCC10B
B4209
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G1966M SAW FILTER
Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
Text: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation
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4H74
Abstract: NE68337 S21E
Text: N E C / C A L IF O R N IA 1SE NEC D • b457414 000145b NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES T -ÌH 5 1 NE68337 OUTLINE DIMENSIONS Units in mm • LOW OPERATING VOLTAGE OUTLINE 37 • LOW POWER CO NSUM PTION • HIG H INPUT IMPEDANCE DESCRIPTION AND APPLICATIONS
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b427414
NE68337
NE68337
4H74
S21E
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1SS14
Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
Text: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS
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fci427414
ND4000
ND41S1
ND4151
ND4132
1SS14
1SS156
1SS12
ND4131-5T
ND4141
CP 022 ND
743e
1SS15
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varactor ghz
Abstract: GaAs varactor diode gaas varactor diodes ND3140-5M ND3140-5N ND3140-5S power varactor varactor diode high frequency GHz
Text: LT SE C N E C / CALIFORNIA 1SE b457414 D MM WAVE GaAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES T + 7 -/I GOOnOÔ T • LOW CONVERSION LOSS: Lo = 5 dB TYP at f = 10 GHz to 20 GHz ND3140-5S ND3140-5M ND3140-5N Units In mm OUTLINE 5S • HIG H CUTOFF FREQUENCY: fo = 240 GHz TYP
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b457414
ND3140-5S
ND3140-5M
ND3140-5N
b427M14
ND3140-5S,
3140-5M,
varactor ghz
GaAs varactor diode
gaas varactor diodes
ND3140-5N
power varactor
varactor diode high frequency GHz
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Microwave PIN diode
Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Text: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61
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fa4274m
ND6000
T-07-/S
ND6261
ND6361,
ND6461,
ND6481,
ND6651.
ND6261,
Microwave PIN diode
N0627
1sv85
8542A
1SV36
ND6361-3F
ND6371-5E
T07 marking
1SV26
MARKING 8542a
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NEC NE85635
Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
Text: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is
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NE856
NEC NE85635
2SC3356 to 92
NE85634
NEC 2501 MF 216
TRANSISTOR NEC B77
NE85834
2sc3356
sot23 41
NE85635
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NE644
Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Text: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors
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NE644
NE644
NE64-124
NE64408)
34-6393or
2SC2272
NE64400
NE64408
NE64480
NEC Microwave Semiconductors
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PD1712
Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
Text: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich
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bM27Mm
DIVIDE-BY-128/136
UPB568,
UPB568HA
iPB568C,
PB568HA
jjPB568G
jjPD1700
/JPD1709,
PD1711,
PD1712
NEC SIP 8pin
JPB568G
UPB568HA
P8HA-254B
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NE202
Abstract: NE20300 NE20383A
Text: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN
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b4E7414
NE20300
NE20383A
NE203
NE202,
NE202
NE20383A
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20PM4
Abstract: NE985100 NE985200 NE985400
Text: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)
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h427414
00015b?
NE985
NE985100
NE985100
NE985200
NE985400
NE985200
NE985400
20PM4
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NE250
Abstract: NE25000 dual-gate
Text: I SEC N E C / CALIFORNIA 15E I • bM574m HIGH PERFORMANCE DUAL-GATE G aAs MESFET FEATURES • V E R Y HIGH fM Ax: 60 GHz • TWO IN DEPEN DENT G A T E S FO R DESIGN F L E X IB IL IT Y Ta = 25°C) SYM BO LS PA R A M ETER S UNITS RATINGS Vos Drain to Source Voltage
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b4S7414
NE25000
NE250
NE25000
dual-gate
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2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bM27414
QDDB354
T3V-23
NE021
2SC2570
2sc2570 transistor
transistor 2sc2570
NE02103
NE02133
2sc1560
ic 2SC2570
NE02132
NE02100
NE02135
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Untitled
Abstract: No abstract text available
Text: BLINKING j LIT LAMPS • FEATU RES • Standard T1 3/4 • 1/4 Duty Cycle • Pulse Rate : L 2.0Hz , (2) 2.4Hz . (VDD=5V j - Operating Voltage : 2.0V — 15V (DC) • Easily be driven by TTI- & C-MOS circuit no external circuit needed • Plastic case color diffused
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BB-B1174
BB-B5174
B4574
BB-B2174
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PC1675G
Abstract: 1675P
Text: 103 b4E7414 G002b4b 5 bE D E C/ CALIFORNIA NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE D IM ENSIO N S FEA TU RES Units in mm O UTLINE 39 (SOT-143) • W ID E BA N D W ID T H : 1900 MHz T Y P at 3 d B Point for UPC1675G
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b4E7414
G002b4b
UPC1675B
UPC1675G
UPC1675P
OT-143)
UPC1675B,
UPC1675
PC1675G
1675P
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al 232 nec
Abstract: NE64400 NE644 NE64408 S21E
Text: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors
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b427414
NE64400
NE64408
NE644
gain60
al 232 nec
NE64408
S21E
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B4574-0023
Abstract: No abstract text available
Text: m o le x MKRO-C Rubber Cable Cordsets US Dual Key Male Plug With External Threads ORDERING INFORMATION AND DIMENSIONS 84574 •■ 1 . 6 8 - E3 £ f 2 Graft 18AW G O rder No. Length 84574 0000 84574-0001 84574-0002 84574-0003 84574-0004 3' 6'
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B4574-0023
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NEL230153
Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Text: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB
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h427414
T-33-T-
NEL2300
V3301
NEL230353
NEL230153
GG01
transistor k42
3500 2301 151
k424
LARGE SIGNAL IMPEDANCES
transistor T330
NEL2301-53
NEL2303
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