S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

fet MARKING MHp

Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
Contextual Info: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and

Contextual Info: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure

Contextual Info: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance

Contextual Info: BF996SR Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)17 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.

Contextual Info: BF996 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ Thermal Resistance Junc-Amb.

BF996S

Abstract: GPS25 829 Tetrode
Contextual Info: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range

Contextual Info: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance

Q03407

Contextual Info: BF996S PHILIPS INTERNATIONAL SbE D 711002b Q03407Ö • PHIN F O R D E T A I L E D IN F O R M A T IO N S E E T H E L A T E S T IS S U E O F H A N D B O O K S C 0 7 O R D A T A S H E E T T - 3 5 -2 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and

BF996

Abstract: BF 996 S BF996S
Contextual Info: Tem ic BF996S Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode £ Applications Electrostatic sensitive device. Observe precautions for handling. *' Input and mixer stages in UHF tuner. Features • Integrated gate protection diodes

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates

marking code 11G1

Contextual Info: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.

BF996S

Abstract: marking ANs
Contextual Info: VllDÖSt. □□L.&Tlb EflQ IPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tran sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.

Contextual Info: 7 UDÖEL. QDt.a?lb EflO HIPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D ep letio n ty p e fie ld -e ffe c t transistor in a plastic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by

marking code cig

Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF996

Contextual Info: _ _ :_ _u _ N A PIER PHILIPS/DISCRETE ^53=131 0013014 T • BF996 OLE D _JC SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate interconnected, intended for u.h.f. applications, such as television tuners and professional communi­

Contextual Info: BF996S Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.480

BF996

Abstract: marking BS marking BS mosfet
Contextual Info: - v . - - '_-—_ N AMER PHILIP S/ DIS CRETE übE D WÊ :_ ^53^31 l i _i _ 0D13D14 T BF996 A ' T -s i-a .s -' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate

BF996S

Abstract: marking code cig dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

BF996S

Contextual Info: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance

BF996S

Abstract: BF996SA BF996SB
Contextual Info: BF996S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure

Contextual Info: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.