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    FAIRCHILD TRANSISTOR TO5 Search Results

    FAIRCHILD TRANSISTOR TO5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD TRANSISTOR TO5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019

    k 3683 transistor

    Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original     		PDF 2N6076 k 3683 transistor BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247

    2N5308

    Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
    Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247

    2N3663

    Abstract: CBVK741B019 F63TNR PN2222N PN918
    Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N3663 PN918 2N3663 CBVK741B019 F63TNR PN2222N

    PN5179

    Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2

    MPSA12

    Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
    Text: MPSA12 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA12 MPSA14 MPSA12 CBVK741B019 F63TNR PN2222N

    CBVK741B019

    Abstract: F63TNR MPSA28 MPSA29 PN2222N BCxxx TRANSISTOR
    Text: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA29 MPSA28 CBVK741B019 F63TNR MPSA29 PN2222N BCxxx TRANSISTOR

    2N5307

    Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
    Text: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5307 MPSA14 2N5307 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN4275 PN2369A

    Untitled

    Abstract: No abstract text available
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14

    transistor 2001 H1

    Abstract: PN4275 CBVK741B019 F63TNR PN2222N PN2369A
    Text: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN4275 PN2369A transistor 2001 H1 PN4275 CBVK741B019 F63TNR PN2222N

    PN2222N

    Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14 PN2222N 2N6426 CBVK741B019 F63TNR transistor k 0247

    2N5769

    Abstract: No abstract text available
    Text: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5769 PN2369A 2N5769

    Untitled

    Abstract: No abstract text available
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10

    NZT7053

    Abstract: 2N7052 2N7053 CBVK741B019 F63TNR PN2222N
    Text: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*


    Original     		PDF 2N7053 2N7052 NZT7053 O-226 OT-223 NZT7053 2N7052 2N7053 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text:         :      ; :   " #  ;! -<.$ 4=  / / 3/               °            


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    SH2100

    Abstract: fairchild micrologic 5 pin relay 12vdc free fairchild micrologic 923 fairchild micrologic 903 FD600 Fairchild SH rtl micrologic rtl micrologic 923 ScansUX983
    Text: SH2100 HIGH CURRENT DRIVER HYBRID CIRCUITS GENERAL DESCRIPTION - The SH 2100 Hybrid consists of a Buffer Micrologic Integrated Circuit driving a high-current NPN Planar* Epitaxial Silicon Transistor. PHYSICAL DIMENSIONS SIMILAR TO TO-5J ♦Planar is a patented Fairchild process.


    OCR Scan     		PDF SH2100 FD600: 12VDC fairchild micrologic 5 pin relay 12vdc free fairchild micrologic 923 fairchild micrologic 903 FD600 Fairchild SH rtl micrologic rtl micrologic 923 ScansUX983

    2N2907A FAIRCHILD SEMICONDUCTOR

    Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
    Text: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE


    OCR Scan     		PDF 34bcit174 2N2710/FTS02710 2N2710 FTS02710 O-236AA/AB 2N3107) 2N3108) 2N3109) 140kHz 2N2907A FAIRCHILD SEMICONDUCTOR 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020

    half-adder by using D flip-flop

    Abstract: L9915 fairchild micrologic ME 9926 rtl micrologic rs FLIPFLOP SCHEMATIC mod 8 using jk flipflop rtl micrologic 900 700S2 dual flip flop 8-pin
    Text: JUNE 1966 • SL-218 RT|xL COMPOSITE DATA SHEET INDUSTRIAL MICROLOGIC INTEGRATED CIRCUITS OPERATI NG T E M P E R A T U R E RANGE: 0°C t o + 7 0 ° C M E T A L PACKAGE 15° C t o 5 5° C (EPOXY) s o > co X GENERAL DESCRIPTION — The Fairchild Ind ustrial Resistor-Transistor M icrologic® (RY/iL) integrated c irc u it fa m ily consists o f a num ber


    OCR Scan     		PDF SL-218 half-adder by using D flip-flop L9915 fairchild micrologic ME 9926 rtl micrologic rs FLIPFLOP SCHEMATIC mod 8 using jk flipflop rtl micrologic 900 700S2 dual flip flop 8-pin