200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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PDF
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30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120
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OCR Scan
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O-268
35-06C
40-06D
OT-227B
50-12E
50-12BD
30N120D1
55N120D1
35N60BD1
30n120d
35N60B
transistor c90
40N120D1
20N120D1
60N120
20N60BD1
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PDF
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30n60
Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10
Text: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100
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OCR Scan
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20N60
30N60
40N60
25N100
45N100
45N120
O-247
G 40N60 igbt
Insulated Gate Bipolar Transistors
igbt 30N60
40n60 igbt
45N10
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PDF
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20N60A4
Abstract: 20N60A4 equivalent HGTG*N60A4D hg*20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4 HGTP20N60A4
Text: HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 600 V SMPS IGBT Features The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications
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HGTG20N60A4,
HGTP20N60A4
HGTG20N60A4
HGTP20N60A4
TA49339.
O-220AB
20N60A4
20N60A4 equivalent
HGTG*N60A4D
hg*20n60
Commit
TA49372
marking 20n60a4
IGBT 20n60a4
igbt fairchild 20n60a4
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PDF
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20N60A4 equivalent
Abstract: No abstract text available
Text: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high
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HGTG20N60A4
HGTG20N60A4
TA49339.
O-247
20N60A4 equivalent
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PDF
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diode B4
Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B
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O-263
O-247
O-268
STO-227
O-220
20N60
35N60
20N120
20N120
diode B4
ixdn75n120
STO-227
IGBT D-Series
IXDH20N120AU1
20N60B
30N120
55N120
30N120D1
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PDF
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20N60U1
Abstract: 20N60AU1 N60AU1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR
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N60U1
N60AU1
20N60U1
20N60AU1
20N60U1
20N60AU1
N60AU1
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PDF
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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PDF
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20N60A
Abstract: D-68623 20N60U1 20N60AU
Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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N60U1
N60AU1
D-68623
20N60U1
20N60AU1
20N60A
20N60U1
20N60AU
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PDF
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20N60A
Abstract: 20n60 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a
Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90
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20N60
20N60A
O-204AE
20N60
20N60A
20N60U1
20N60AU1
ixgh 1500
20N60 datasheet
20n60 G
N60A
20N60AU
MJ 900#
f 20n60a
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings
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OCR Scan
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N60U1
N60AU1
O-247
4hflb22b
20N60U1
20N60AU1
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PDF
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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PDF
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20N60AU
Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60
Text: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V
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OCR Scan
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O-247
T0-204AE
20N60AU
20N60A
g20n60
N60A
20N60
30 N60A
bt 151 600
20n60 G
LT0B
igbt 20n60
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PDF
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20N60A
Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60
Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90
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20N60
20N60A
O-204AE
20N60
20N60A
20N60U1
20N60AU1
f 20n60a
N60A
IXGH 20 N60A
30NC60
igbt 20n60
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90
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OCR Scan
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O-247
DDD3S72
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PDF
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IGBT 20N60
Abstract: 20N60 20N60A 20n60 igbt N60A 20n60 G IXSM20N60A MJ1000
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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Original
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O-247
20N60
20N60A
O-204AE
IGBT 20N60
20N60
20N60A
20n60 igbt
N60A
20n60 G
IXSM20N60A
MJ1000
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PDF
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IXGH20N60AU1
Abstract: N60A *GH20N60AU1 20N60AU 20N60
Text: 600 V 600 V 40 A 40 A CO iO, LU ^C25 O IXGH 20 N60U1 IXGH 20 N60AU1 > Low VrP, n IGBT with Diode CE sat High speed IGBT with Diode v CES 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ
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OCR Scan
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IXGH20
N60U1
IXGH20N60AU1
O-247
4bflb22b
20N60U1
20N60AU1
N60A
*GH20N60AU1
20N60AU
20N60
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PDF
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20n60a40
Abstract: 20N60A 20N60 20N60A9 igbt 20n60
Text: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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O-247
O-204
O-204AE
20N60
20N60A
20N60U1
20N60AU1
20n60a40
20N60A9
igbt 20n60
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PDF
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30n60
Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100
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OCR Scan
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00Q1737
20N60
O-247
30N60
40N60
25N100
45N100
45N120
20N60A
24N60A
30n60
40N60AU1
40N60
igbt 30N60
30N60A
50N100
30n60* 227
30N60U1
IXSN40N60AU1
50N60U1
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PDF
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20N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 20N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7
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OCR Scan
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MGW20N60D/D
20N60D
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PDF
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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OCR Scan
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IC25 VCE sat typ tfi IXGA 20N60B IXGP 20N60B = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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Original
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20N60B
20N60B
O-263
O-220
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PDF
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ph-15 diode
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20
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OCR Scan
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20N60BD1
20N60BD1
O-268
O-247AD
ph-15 diode
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PDF
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20N60BD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES
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Original
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20N60BD1
O-268
20N60BD1
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PDF
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