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    LH53259 Search Results

    LH53259 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH53259 Sharp CMOS 256K (32K x 8) MROM Original PDF
    LH53259D Sharp CMOS 256K(32K x 8) Mask-Programmable ROM Original PDF
    LH53259D Sharp CMOS 256K (32K x 8) Mask-Programmable ROM Scan PDF
    LH53259N Sharp CMOS 256K(32K x 8) Mask-Programmable ROM Original PDF
    LH53259N Sharp CMOS 256K (32K x 8) Mask-Programmable ROM Scan PDF
    LH53259T Sharp CMOS 256K(32K x 8) Mask-Programmable ROM Original PDF
    LH53259T Sharp CMOS 256K (32K x 8) Mask-Programmable ROM Scan PDF

    LH53259 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH53259

    Abstract: LH53259D TSOP028-P-0813
    Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) CMOS 256K (32K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC 1 28 VCC A12 2


    Original
    PDF LH53259 28-PIN 28-pin, 600-mil 450-mil LH53259 28TSOP LH53259D TSOP028-P-0813

    TSOP028-P-0813

    Abstract: LH53259 LH53259D
    Text: LH53259 CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC


    Original
    PDF LH53259 28-PIN 28-pin, 600-mil 450-mil 28TSOP TSOP028-P-0813 LH53259 LH53259D

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


    Original
    PDF MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000

    A14C

    Abstract: LH53259 sharp mask rom
    Text: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)


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    PDF LH53259 28-pin, 600-mil 450-mil LH53259 28-pin 28TSOP A14C sharp mask rom

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


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    PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


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    PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


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    PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    Untitled

    Abstract: No abstract text available
    Text: LH53259 C M O S 256K 32K x 8 M ask-Program m able ROM PIN CONNECTIONS FEATURES • 32 ,768 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: Operating: 110 m W (M AX.) Standby: 8 2.5 (M AX.) • Programmable output enable •


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    PDF LH53259 28-pin, 600-m 450-m 44-pin, LH53259

    Untitled

    Abstract: No abstract text available
    Text: LH53259 C M O S 256K 3 2 K x 8 M ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization 28-PIN DIP 28-PIN SOP • Access time: 150 ns (MAX.) TOP VIEW . • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 p.W (MAX.) NCd 1• 28 □ VCC


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    PDF LH53259 28-pin, 600-mil 450-mil 28-PIN 28TSOP

    Untitled

    Abstract: No abstract text available
    Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) CMOS 2 56K (3 2 K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP s • Programmable output enable • Static operation


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    PDF LH53259 28-pin, 600-mil 450-mil LH53259 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. CMOS 256K (32K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 (iW (MAX.) A 12IZ • Static operation


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    PDF LH53259 28-pin, 600-mil 450-mil LH53259 28-PIN 28nninimmiiF~

    QFP44-P-1010

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 3 2 ,7 6 8 • Access time: 150 ns (M AX.) • Low-power consumption: x 8 bit organization Operating: 110 m W (M AX.) Standby: 8 2 .5 |iW (M AX.) • Programmable output enable • Static operation (Internal sync, system)


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    PDF 28-pin, 600-m 450-m 44-pin, LH53259 LH53259 I-------15 600-mil QFP44-P-1010

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    Untitled

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS TO P VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 |iW (MAX.) • Programmable output enable


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    PDF 28-pin, 600-mil 450-mil LH53259 28-PIN

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


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    PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


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    PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    Untitled

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 Mask-Program m able ROM FEATURES • 32,768 x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 28-PIN DIP 28-PIN SOP TOP VIEW S NCC • Low-power consumption: Operating: 110 mW (MAX.) Standby: 82.5 (MAX.) • Programmable output enable


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    PDF 28-pin, 600-mil 450-mil 44-pin, LH53259 28-PIN

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    lh5s4

    Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
    Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply


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    PDF LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ 32SOP/32TSOP 32TSOP lh5s4 LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP