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    LH53259D Search Results

    LH53259D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH53259D Sharp CMOS 256K(32K x 8) Mask-Programmable ROM Original PDF
    LH53259D Sharp CMOS 256K (32K x 8) Mask-Programmable ROM Scan PDF

    LH53259D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH53259

    Abstract: LH53259D TSOP028-P-0813
    Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) CMOS 256K (32K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC 1 28 VCC A12 2


    Original
    PDF LH53259 28-PIN 28-pin, 600-mil 450-mil LH53259 28TSOP LH53259D TSOP028-P-0813

    TSOP028-P-0813

    Abstract: LH53259 LH53259D
    Text: LH53259 CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC


    Original
    PDF LH53259 28-PIN 28-pin, 600-mil 450-mil 28TSOP TSOP028-P-0813 LH53259 LH53259D

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


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    PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    A14C

    Abstract: LH53259 sharp mask rom
    Text: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)


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    PDF LH53259 28-pin, 600-mil 450-mil LH53259 28-pin 28TSOP A14C sharp mask rom

    QFP44-P-1010

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 3 2 ,7 6 8 • Access time: 150 ns (M AX.) • Low-power consumption: x 8 bit organization Operating: 110 m W (M AX.) Standby: 8 2 .5 |iW (M AX.) • Programmable output enable • Static operation (Internal sync, system)


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    PDF 28-pin, 600-m 450-m 44-pin, LH53259 LH53259 I-------15 600-mil QFP44-P-1010

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    Untitled

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS TO P VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 |iW (MAX.) • Programmable output enable


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    PDF 28-pin, 600-mil 450-mil LH53259 28-PIN

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


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    PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    Untitled

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 Mask-Program m able ROM FEATURES • 32,768 x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 28-PIN DIP 28-PIN SOP TOP VIEW S NCC • Low-power consumption: Operating: 110 mW (MAX.) Standby: 82.5 (MAX.) • Programmable output enable


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    PDF 28-pin, 600-mil 450-mil 44-pin, LH53259 28-PIN

    lh5s4

    Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
    Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply


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    PDF LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ 32SOP/32TSOP 32TSOP lh5s4 LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP

    Untitled

    Abstract: No abstract text available
    Text: LH53259 C M O S 256K 32K x 8 M ask-Program m able ROM PIN CONNECTIONS FEATURES • 32 ,768 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: Operating: 110 m W (M AX.) Standby: 8 2.5 (M AX.) • Programmable output enable •


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    PDF LH53259 28-pin, 600-m 450-m 44-pin, LH53259

    Untitled

    Abstract: No abstract text available
    Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) CMOS 2 56K (3 2 K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP s • Programmable output enable • Static operation


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    PDF LH53259 28-pin, 600-mil 450-mil LH53259 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. CMOS 256K (32K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 (iW (MAX.) A 12IZ • Static operation


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    PDF LH53259 28-pin, 600-mil 450-mil LH53259 28-PIN 28nninimmiiF~

    sharp mask rom 44-pin

    Abstract: mask programmable rom sharp mask rom 532595
    Text: CMOS 256K 32K x 8 Mask Programmable ROM FEATURES • • • • • • PIN CONNECTIONS 32,768 x 8 bit organization Access time: 28-PIN DIP 28-PIN SOP TOP VIEW - \ 28 □ Vcc f 150 ns (MAX.) NCC 1• A12C 2 27 □ a 7C 3 26 □ Ai3 Operating: 110 mW (MAX.)


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    PDF 28-PIN 28-pin, 600-mil 450-mil 44-pin, 44-PIN LH53259 I-------15 sharp mask rom 44-pin mask programmable rom sharp mask rom 532595