LH53259
Abstract: LH53259D TSOP028-P-0813
Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) CMOS 256K (32K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC 1 28 VCC A12 2
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LH53259
28-PIN
28-pin,
600-mil
450-mil
LH53259
28TSOP
LH53259D
TSOP028-P-0813
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TSOP028-P-0813
Abstract: LH53259 LH53259D
Text: LH53259 CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC
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Original
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PDF
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LH53259
28-PIN
28-pin,
600-mil
450-mil
28TSOP
TSOP028-P-0813
LH53259
LH53259D
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536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
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LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
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A14C
Abstract: LH53259 sharp mask rom
Text: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)
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OCR Scan
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LH53259
28-pin,
600-mil
450-mil
LH53259
28-pin
28TSOP
A14C
sharp mask rom
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QFP44-P-1010
Abstract: No abstract text available
Text: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 3 2 ,7 6 8 • Access time: 150 ns (M AX.) • Low-power consumption: x 8 bit organization Operating: 110 m W (M AX.) Standby: 8 2 .5 |iW (M AX.) • Programmable output enable • Static operation (Internal sync, system)
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28-pin,
600-m
450-m
44-pin,
LH53259
LH53259
I-------15
600-mil
QFP44-P-1010
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LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
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109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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Untitled
Abstract: No abstract text available
Text: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS TO P VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 |iW (MAX.) • Programmable output enable
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OCR Scan
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PDF
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28-pin,
600-mil
450-mil
LH53259
28-PIN
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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TC511001
TC514101
514170B
514280B
TC5316200P
KM2X16100
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
TC55B8128
KM23C4000AG
TC534000AF
HN62308BP
TC551632
hitachi cross
mb83
68512U
HITACHI 64k DRAM
TC55B4256
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Untitled
Abstract: No abstract text available
Text: CMOS 256K 32K x 8 Mask-Program m able ROM FEATURES • 32,768 x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 28-PIN DIP 28-PIN SOP TOP VIEW S NCC • Low-power consumption: Operating: 110 mW (MAX.) Standby: 82.5 (MAX.) • Programmable output enable
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OCR Scan
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28-pin,
600-mil
450-mil
44-pin,
LH53259
28-PIN
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lh5s4
Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply
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LH53V1ROON/T
LH53V2R00AN/AT
LH53V2T00E
LH53V2YOONÆ
LH53V4T00E
LH53V4R00AN/AT
LH53V4Y00NÆ
32SOP/32TSOP
32TSOP
lh5s4
LH-MN47XX
lh5s4axx
LH5359
LH5s
lh5317
LH532CXX
32DIP
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Untitled
Abstract: No abstract text available
Text: LH53259 C M O S 256K 32K x 8 M ask-Program m able ROM PIN CONNECTIONS FEATURES • 32 ,768 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: Operating: 110 m W (M AX.) Standby: 8 2.5 (M AX.) • Programmable output enable •
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OCR Scan
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PDF
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LH53259
28-pin,
600-m
450-m
44-pin,
LH53259
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Untitled
Abstract: No abstract text available
Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) CMOS 2 56K (3 2 K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP s • Programmable output enable • Static operation
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OCR Scan
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PDF
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LH53259
28-pin,
600-mil
450-mil
LH53259
28-PIN
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Untitled
Abstract: No abstract text available
Text: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. CMOS 256K (32K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 (iW (MAX.) A 12IZ • Static operation
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OCR Scan
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PDF
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LH53259
28-pin,
600-mil
450-mil
LH53259
28-PIN
28nninimmiiF~
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sharp mask rom 44-pin
Abstract: mask programmable rom sharp mask rom 532595
Text: CMOS 256K 32K x 8 Mask Programmable ROM FEATURES • • • • • • PIN CONNECTIONS 32,768 x 8 bit organization Access time: 28-PIN DIP 28-PIN SOP TOP VIEW - \ 28 □ Vcc f 150 ns (MAX.) NCC 1• A12C 2 27 □ a 7C 3 26 □ Ai3 Operating: 110 mW (MAX.)
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OCR Scan
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PDF
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28-PIN
28-pin,
600-mil
450-mil
44-pin,
44-PIN
LH53259
I-------15
sharp mask rom 44-pin
mask programmable rom
sharp mask rom
532595
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