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    PACKAGE TYPE 440109 Search Results

    PACKAGE TYPE 440109 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-059FTYPEMM-050 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-050 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 50 ft Datasheet
    CO-059FTYPEMM-006 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-006 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 6 ft Datasheet
    CO-059FTYPEMM-010 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-010 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 10 ft Datasheet
    CO-059FTYPEMM-025 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-025 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 25 ft Datasheet
    CO-059FTYPEMM-003 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-003 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 3 ft Datasheet

    PACKAGE TYPE 440109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF2012 30dBc UPF2012F UPF2012P UPF2012 UPF2012F UPF2012P

    F1840

    Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF2012 30dBc UPF2012F UPF2012P UPF2012 F1840 Cree Microwave cree rf UPF2012-178 UPF2012F UPF2012P package type 440109

    Untitled

    Abstract: No abstract text available
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF2012 30dBc UPF2012F UPF2012P 44017r UPF2012

    Untitled

    Abstract: No abstract text available
    Text: UGF2005 5W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 5W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier


    Original     		PDF UGF2005 UGF2005F UGF2005P UGF2005-178 UGF2005

    UGF2008

    Abstract: No abstract text available
    Text: UGF2008 8W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 8W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier


    Original     		PDF UGF2008 UGF2008F UGF2008P UGF2008-178 UGF2008

    UPF2010-178

    Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109
    Text: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF2010 30dBc UPF2010F UPF2010P UPF20AP 100UF 125MW, UPF2010 UPF2010F UPF2010-178 Cree Microwave upf2010 AC DC 10w 47PF UPF2010P J033 package type 440109

    UPF1010F

    Abstract: J181 upf1010 UPF1010-178 UPF1010P 100UF 47PF
    Text: UPF1010 10W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P UPF1010-178 UPF1010 UPF1010F J181 UPF1010-178 UPF1010P 100UF 47PF

    UGF2005

    Abstract: UGF2005-178 UGF2005F cree rf UGF2005P
    Text: UGF2005 5W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 5W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier


    Original     		PDF UGF2005 UGF2005F UGF2005P UGF2005-178 UGF2005 UGF2005-178 UGF2005F cree rf UGF2005P

    J181

    Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109
    Text: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P J181 UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109

    UPF2010F

    Abstract: ultrarf UPF2010 UPF2010P
    Text: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF2010 30dBc UPF2010F UPF2010P UPF2010F ultrarf UPF2010 UPF2010P

    cree MOS

    Abstract: MRF9030 UGF09030 UGF09030P UGF9030F UGF9030P
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030 cree MOS MRF9030 UGF09030P UGF9030F UGF9030P

    Untitled

    Abstract: No abstract text available
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030

    Untitled

    Abstract: No abstract text available
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF09030F UGF09030

    UPF1010

    Abstract: f940 ultrarf
    Text: URFDB Sec 04_1010 11/3/99 10:37 AM Page 4-1 UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1010 30dBc UPF1010 f940 ultrarf

    UPF2010

    Abstract: 1103AM package type 440109
    Text: URFDB Sec 08_2010 11/3/99 11:03 AM Page 8-1 UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA,


    Original     		PDF UPF2010 30dBc UPF2010 1103AM package type 440109

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P

    Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P-TB

    Abstract: RO5880 006P CGH40006P JESD22 CGH40006
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006

    CGH40006

    Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006 CGH40006, CGH40 f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649

    cgh40006p

    Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR

    PR221DS sace tmax

    Abstract: ABB RD2 earth leakage relay 2CSC400002D0205 mccb 60947-2 max zs ABB Sace Tmax S941N C2 60947-2 MAX EARTH LOOP IMPEDANCE BSEN 60898 R0427 50Hz to 60Hz 400v circuit diagram SQZ3
    Text: Technical catalogue System pro M compact and other modular devices for low voltage installation System pro M compact® and other modular devices for low voltage installation In consideration of modifications to Standards and materials, the characteristics


    Original     		PDF 2CSC400002D0205 pr11-2006 PR221DS sace tmax ABB RD2 earth leakage relay mccb 60947-2 max zs ABB Sace Tmax S941N C2 60947-2 MAX EARTH LOOP IMPEDANCE BSEN 60898 R0427 50Hz to 60Hz 400v circuit diagram SQZ3