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    RJH60D5 Search Results

    RJH60D5 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RJH60D5DPK-00#T0 Renesas Electronics Corporation IGBT for Inverter Applications, TO-3P, / Visit Renesas Electronics Corporation
    RJH60D5BDPQ-E0#T2 Renesas Electronics Corporation IGBT for Inverter Applications, TO-247, / Visit Renesas Electronics Corporation
    RJH60D5DPM-00#T1 Renesas Electronics Corporation IGBT for Inverter Applications, TO-3PFM, /Tube Visit Renesas Electronics Corporation
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    RJH60D5 Price and Stock

    Renesas Electronics Corporation RJH60D5DPK-00-T0

    IGBT TRENCH 600V 75A TO3P
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    Renesas Electronics Corporation RJH60D5BDPQ-E0-T2

    IGBT TRENCH 600V 75A TO247
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    Renesas Electronics Corporation RJH60D5BDPQ-E0#T2

    Trans IGBT Chip N-CH 600V 75A 3-Pin TO-247 Tube (Alt: RJH60D5BDPQ-E0#T2)
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    Avnet Silica RJH60D5BDPQ-E0#T2 28 Weeks 1
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    RJH60D5 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60D5BDPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 200W TO-247 Original PDF
    RJH60D5DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 200W TO3P Original PDF
    RJH60D5DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 45W TO3PFM Original PDF
    RJH60D5DPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 200W TO-247 Original PDF

    RJH60D5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5BDPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0794EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5BDPQ-E0 R07DS0794EJ0200 PRSS0003ZE-A O-247)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0738EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPQ-E0 R07DS0738EJ0100 PRSS0003ZE-A O-247)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPM R07DS0174EJ0200 PRSS0003ZA-A

    PRSS0003ZH-A

    Abstract: RJH60 RJH60D5DPQ RJH60D5
    Text: Preliminary Datasheet RJH60D5DPQ-A0 600 V - 37 A - IGBT Application: Inverter R07DS0527EJ0100 Rev.1.00 Aug 26, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPQ-A0 R07DS0527EJ0100 PRSS0003ZH-A O-247A) PRSS0003ZH-A RJH60 RJH60D5DPQ RJH60D5

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPM R07DS0174EJ0200 PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPK Silicon N Channel IGBT Application: Inverter R07DS0163EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPK R07DS0163EJ0300 PRSS0004ZE-A

    RJH60D5DPK

    Abstract: No abstract text available
    Text: Preliminary RJH60D5DPK Silicon N Channel IGBT Application: Inverter REJ03G1846-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P C 1. Gate 2. Collector


    Original     		PDF RJH60D5DPK REJ03G1846-0100 PRSS0004ZE-A RJH60D5DPK

    RJH60D5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0738EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPQ-E0 R07DS0738EJ0100 PRSS0003ZE-A O-247) RJH60D5

    RJH60D5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPM Silicon N Channel IGBT Application: Inverter R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPM R07DS0174EJ0100 PRSS0003ZA-A RJH60D5

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPK 600V - 37A - IGBT Application: Inverter R07DS0163EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPK R07DS0163EJ0400 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5BDPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0794EJ0300 Rev.3.00 May 23, 2013 Features • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5BDPQ-E0 R07DS0794EJ0300 PRSS0003ZE-A O-247)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPQ-A0 600 V - 37 A - IGBT Application: Inverter R07DS0527EJ0100 Rev.1.00 Aug 26, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPQ-A0 R07DS0527EJ0100 PRSS0003ZH-A O-247A)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPK 600V - 37A - IGBT Application: Inverter R07DS0163EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPK R07DS0163EJ0400 PRSS0004ZE-A

    RJH60D5

    Abstract: RJH60 PRSS0004ZE-A SC-65 RJH60D5DPK rjh60d
    Text: Preliminary Datasheet RJH60D5DPK R07DS0163EJ0200 Previous: REJ03G1846-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D5DPK R07DS0163EJ0200 REJ03G1846-0100) PRSS0004ZE-A di9044 RJH60D5 RJH60 PRSS0004ZE-A SC-65 RJH60D5DPK rjh60d

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original     		PDF RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK