150-F85NBD
Abstract: 150-F201NBD 150-F317NBD 150-C25NBD 150-F480NBD 150-C25NBR Allen-Bradley soft starter 150-C60NBD 150-C43NBD 150-F108NBD 150-F43NBD
Text: SELECTION GUIDE SMC Flex and SMC™-3 Bulletin 150 SIZE FOR SIZE . . . BEST VALUE IN THE INDUSTRY Bulletin 150 Smart Motor Controllers Bulletin 150 — Reduced Voltage Starters Features SMC Flex Controller SMC-3 Controller 200…690V 1…1250 A 200…600V
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150-SG009D-EN-P
150-SG009C-EN-P
150-F85NBD
150-F201NBD
150-F317NBD
150-C25NBD
150-F480NBD
150-C25NBR
Allen-Bradley soft starter 150-C60NBD
150-C43NBD
150-F108NBD
150-F43NBD
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45N120B
Abstract: No abstract text available
Text: IXSH 45N120B I = 75 A C25 IXST 45N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.0 V High Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200
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45N120B
O-26m.
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C
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7N60CD1
O-220AB
O-263
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8f46
Abstract: 40N60C C110 IXGH40N60C
Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C110
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40N60C
O-268
O-247
O-268
IXGH40N60C)
8f46
40N60C
C110
IXGH40N60C
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IXSH15N120B
Abstract: No abstract text available
Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200
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15N120B
O-247
O-268
O-247)
13/1or
IXSH15N120B
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Untitled
Abstract: No abstract text available
Text: IXSH 45N120B I = 75 A C25 IXST 45N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.0 V High Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200
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45N120B
O-247
O-268
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15N120
Abstract: No abstract text available
Text: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
15N120
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4013V
Abstract: Siemens DIODE E 1220 30N60B2D1
Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2D1
30N60B2D1
IC110
O-247
O-268
4013V
Siemens DIODE E 1220
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35N140A
Abstract: VNA4 jm 60 ac
Text: High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N140A IXSH 35N135A Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C
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35N140A
35N135A
35N140A
VNA4
jm 60 ac
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60N60C2D1
Abstract: No abstract text available
Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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60N60C2D1
IC110
O-264
IF110
PLUS247
0-06A
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30n60
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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30N60BD1
O-247
O-268
O-268
30n60
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7N60B
Abstract: No abstract text available
Text: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous
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7N60B
7N60B
O-220AB
O-263
O-220
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50N60
Abstract: G 50N60 IXGH50N50B
Text: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n
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50N50B
50N60B
50N50
50N60
O-247
G 50N60
IXGH50N50B
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50N60
Abstract: G 50N60 50n60b IXGH50N50B IXGH50N60B
Text: DIXYS HiPerFAST IGBT V CES IXGH 50N50B IXGH 50N60B 500 V 600 V ^C25 75 A 75 A V CE sat t,i 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V V CGR ^ = 25°C to 150°C; RGE = 1 Mi2
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50N50B
50N60B
50N50
50N60
O-247
50N50
G 50N60
50n60b
IXGH50N50B
IXGH50N60B
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75n120
Abstract: No abstract text available
Text: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ
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75N120
OT-227
E153432
D-68623
75n120
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50N60
Abstract: 50N6
Text: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2
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247TM
IXSX50N60AU1
IXSX50N60AU1S
50N60AU1S)
O-247
247TM
50N60AU1)
50N60
50N6
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information LowVrP, „ üh sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V ^C25 V CE(sat) Combi Pack AL Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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28N60BD1
O-247
O-268
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diode lt 247
Abstract: IXGH32N60
Text: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
diode lt 247
IXGH32N60
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ES760
Abstract: No abstract text available
Text: « T y v C . MIMS0-12Â4 IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability Square RBSOA MID MID 150-12 A4 = 180 A = 1200 V = 2.2 V MDI Preliminary data 5 ^ 1 Symbol Conditions Maximum Ratings VqeS T j = 25°C to 150°C
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MIMS0-12
D-68623
ES760
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Untitled
Abstract: No abstract text available
Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400
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40N140
40N160
O-247
40N160
D-68623
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30
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120N60B
PLUS247â
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smd diode JC 0p
Abstract: DIODE SMD GEM IXGH24N60AU1S
Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600
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24N60AU1
IXGH24N60AU1S
O-247
24N60AU1S)
24N60AU1S
D94006DE,
smd diode JC 0p
DIODE SMD GEM
IXGH24N60AU1S
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Untitled
Abstract: No abstract text available
Text: DIXYS High Voltage, Low VCE sat IGBT IXSH 45N120 VCES = 1200 V ^C25 = 75 A = 3V V CE(sat) Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C; Roc „ = 1 MQ 1200
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45N120
125oC
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Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C
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IXGH28N30A
IXGH28N30AS
O-247
28N30AS)
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