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    7N60B Search Results

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    7N60B Price and Stock

    Rochester Electronics LLC HGTP7N60B3D

    IGBT, 14A, 600V, N-CHANNEL, TO-2
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    DigiKey HGTP7N60B3D Bulk 16,665 278
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    HGTP7N60B3D Tube 2,347 278
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    Rochester Electronics LLC SSI7N60BTU

    N-CHANNEL POWER MOSFET
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    DigiKey SSI7N60BTU Bulk 964 964
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    Rochester Electronics LLC HGTD7N60B3

    IGBT 600V 14A IPAK
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    DigiKey HGTD7N60B3 Bulk 900 410
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    Rochester Electronics LLC HGTD7N60B3S

    14A, 600V, UFS N-CHANNEL IGBT
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    DigiKey HGTD7N60B3S Bulk 703 398
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    Rochester Electronics LLC SSW7N60BTM

    N-CHANNEL POWER MOSFET
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    DigiKey SSW7N60BTM Bulk 697 417
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    Find more 7N60B price and stock on Findchips.com

    7N60B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7N60B IXYS Hiperfast IGBT Original PDF

    7N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7n60b

    Abstract: DS98977
    Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V VCES IC25 VCE sat tfi = 600 V


    Original     		PDF 7N60BD1 150ns O-220AB O-263 728B1 7n60b DS98977

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi = 600 V = 14 A = 2.0 V = 150ns Maximum Ratings 600 600 V Continuous


    Original     		PDF 7N60BD1 150ns O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C


    Original     		PDF 7N60B O-220AB O-263 728B1

    7N60B

    Abstract: 7N60B equivalent how to test 7N60B 7N60B pdf download free 7N60 7N60B UPS equivalents transistor 7n60b
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C


    Original     		PDF 7N60B O-220AB O-263 temp020 728B1 7N60B 7N60B equivalent how to test 7N60B 7N60B pdf download free 7N60 7N60B UPS equivalents transistor 7n60b

    7N60B

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT VCES IC25 VCE sat typ tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 7N60B 7N60B O-220AB O-263 O-220 O-220)

    7n60b

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat typ tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C


    Original     		PDF 7N60B 7N60B O-220AB O-263 O-220 O-220)

    7n60b

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L QW-R502-076 7n60b

    7N60B

    Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60L QW-R502-076

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    7n60f

    Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET

    7N60

    Abstract: 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7N60 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b

    7N60B

    Abstract: TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F O-220F1 O-262 QW-R502-076 7N60B TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60

    7N60B

    Abstract: No abstract text available
    Text: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous


    OCR Scan     		PDF 7N60B 7N60B O-220AB O-263 O-220

    7N60B

    Abstract: 7N60B UPS
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT V CES IXGA 7N60B IXGP 7N60B = = = = ^C25 V CE sat typ t Maximum Ratings Symbol Test Conditions V CES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 M£i 600 V v GES C ontinuous ±20


    OCR Scan     		PDF IXGA7N60B IXGP7N60B O-220) O-220 O-263 O-263 7N60B 7N60B UPS

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50