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Catalog Datasheet	MFG & Type	Document Tags	PDF
MB834000 Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010	Original	MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC 42E ]> n 7^4142 KM23C2100 0011124 ? ESSM6K CMOS MASK ROM 2M-BH 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization Byte M ode: 262,144 x 8 ROM T h e K M 23C 2100 is a fully s tatic m as k program m able	OCR Scan	KM23C2100 8/128K 150ns 2100F	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY KM23C2100H CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access lime: 100ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	KM23C2100H 8/128K 100ns 40-pin 44-pin KM23C2100H KM23C2100H) KM23C2100HFP)	PDF
KM23C2100 Abstract: No abstract text available Text: KM23C2100 CMOS MASK ROM 2M-BÌX 256KX 8/128Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mods: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	KM23C2100 256KX 8/128Kx 150ns 100/iA 40-pln KM23C2100 100pF KM23C2100-15 KM23C2100-20	PDF
Untitled Abstract: No abstract text available Text: SAM S UN G E L E C T R O N I C S INC b?E D 7^4145 DQlb'i74 b32 SP1GK CMOS MASK ROM KM23C2100 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072x16 • Fast access time: 150ns (max.)	OCR Scan	KM23C2100 8/128K 072x16 150ns 40-pin KM23C2100 KM23C2100)	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CMOS MASK ROM KM23C2100H 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 1 3 1 ,0 7 2 x 1 6 • Fast access time: 100ns (max.) • Supply voltage: single + 5V	OCR Scan	KM23C2100H 8/128K 100ns 40-pin 44-pin KM23C2100H KM23C2100H) KM23C2100HFP)	PDF
KM23C2100FP Abstract: No abstract text available Text: KM23C2100 CMOS MASK ROM 2M-Bit 256Kx8/128Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	KM23C2100 256Kx8/128Kx16) 150ns 100/iA 40-pin 44-pin KM23C2100 KM23C2100) KM23C2100FP) KM23C2100FP	PDF
23c2100 Abstract: No abstract text available Text: KM23C2100 CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchabie organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	KM23C2100 8/128K 150ns 40-pin 44-pin KM23C2100 KM23C2100) KM23C2100FP) 23c2100	PDF
Untitled Abstract: No abstract text available Text: CMOS MASK ROM KM23C2100 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES T h e K M 23C 2100 is a fu lly s ta tic m a s k p ro g ra m m a b le • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.)	OCR Scan	KM23C2100 8/128K 150ns 100/jA 40-pin 44-pin KM23C2100) KM23C2100FP)	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b7E D • KM23C2100A 7*ib414E DDlbT7ö Sñfi CMOS MASK ROM 2M-Bit 256Kx8/128Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 100ns (max.)	OCR Scan	KM23C2100A ib414E 256Kx8/128Kx 100ns 50/iA 40-pln KM23C2100A KM23C2100A)	PDF
23c2100 Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15 Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7	OCR Scan	KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15	PDF
toshiba 32k*8 sram Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464 Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258	OCR Scan	KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464	PDF
uPD23C4000 Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A	OCR Scan	64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000	PDF
KM424C256Z Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J	OCR Scan	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"	PDF

41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100	PDF
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256	PDF
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256	PDF
TC55B4257 Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264	OCR Scan	KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v	PDF
KMCJ532512 Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7	OCR Scan	KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL	PDF
KM28C64A Abstract: No abstract text available Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19	OCR Scan	KM75C03A. KM75C101A. KM75C102A. KM75C103A. KM75C104A. KM28C64A	PDF
KM424C256Z Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100	OCR Scan	KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ	PDF
23c2100 Abstract: KM23C2 Text: KM23C2ÎO0A CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x a Word Mode: 131,072 x 16 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	KM23C2 8/128K 100ns 40-pln 23C2100A KM23C210QA-12 KM23C2100A-15 KM23C2100A KM23C2100A) 23c2100	PDF
KM41C1000BJ Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page	OCR Scan	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z	PDF
KMM591000AN Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC	OCR Scan	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble	PDF

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MB834000

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KM23C2100

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KM23C2100FP

23c2100

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23c2100

toshiba 32k*8 sram

uPD23C4000

KM424C256Z

41C464

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TC55B8128

TC55B4257

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KM28C64A

KM424C256Z

23c2100

KM41C1000BJ

KMM591000AN