200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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7N60B equivalent
Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain
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7N60B-2X
7N60C-2X
16N60B2-3X
16N60C2-3X
30N60B2-4X
30N60C2-4X
40N60B2-5Y
40N60C2-5Y
60N60B2-7Y
60N60C2-7Y
7N60B equivalent
10n60b
ixgd
28N12
20N120
16N60C2
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CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV
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O-92M
KRC102M
KRC112M
O-92L
KTN2369,
KTC3194
KTC3197,
KTC3198
KTC945B
KIA431
CHINA TV FBT
transistor 2N3906 smd 2A SOT23
TS4B05G
transistor 2N3904 smd 2A SOT23
fbt tv
KIA7812API
KIA431A transistor
transistor KIA431A
CHINA TV uoc
2N60 MOSFET SMPS
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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7N60B
Abstract: TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-220F
O-220F1
O-262
QW-R502-076
7N60B
TO-262 MOSFET
7N60
7N60B free
mosfet 4b
mosfet TEST
G7N60
G 7N60
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7N60P
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS
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7N60P
03-21-06B
7N60P
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7N60P
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS
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7N60P
O-220
O-263
03-21-06B
7N60P
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7N60P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 = 7 ID25 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 600 600
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7N60P
405B2
7N60P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-Q
7N60-Q
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-Tt
QW-R502-983.
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7N60m
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-M
7N60-M
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TFt
QW-R502-996.
7N60m
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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7n60f
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-F Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-F
7N60-F
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60t
QW-R502-982.
7n60f
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7N60G-TF3-T
Abstract: 7N60 7n60f 7n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-F/7N60-M/7N60-R
/7N60-Q)
QW-R502-076
7N60G-TF3-T
7N60
7n60f
7n60l
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi = 600 V = 14 A = 2.0 V = 150ns Maximum Ratings 600 600 V Continuous
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7N60BD1
150ns
O-220AB
O-263
728B1
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60K
7N60K
QW-R502-776
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Untitled
Abstract: No abstract text available
Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES Maximum Ratings 600 600 V
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7N60CD1
O-220AB
O-263
728B1
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7N60G-TF3-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-F/7N60-M/7N60-R
/7N60-Q)
QW-R502-076
7N60G-TF3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TFt
QW-R502-076.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-R Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-R
7N60-R
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-Tt
QW-R502-984.
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7N60C
Abstract: LI 20 AB
Text: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V
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7N60C
7N60C
O-22QAB
O-263
LI 20 AB
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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7N60C3
Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C
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7N60C3D,
HGT1S7N60C3DS
O-22QAB
O-262AA
HGTP7N60C3D,
HGT1S7N60C3D
HGT1S7N60C3DS
-800-4-H
7N60C3
7N60C3D
S7N60
g7N60C3D
Zener Diode LT 432
diode lt 823
S7N60C3D
600VU
NT 407 F power transistor
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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