5139 mosfet
Abstract: Si6435DQ
Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6435DQ
S-47958--Rev.
15-Apr-96
5139 mosfet
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Si6435DQ siliconix
Abstract: Si6435DQ
Text: Si6435DQ Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.040 @ VGS = -10 V "4.5 0.070 @ VGS = -4.5 V "3.4 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6435DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.
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Si6435DQ
S41471Rev.
Si6435DQ siliconix
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mosfet Vds 30 Vgs 25
Abstract: Si6435DQ
Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6435DQ
S-47958--Rev.
15-Apr-96
mosfet Vds 30 Vgs 25
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S-49534
Abstract: Si6435DQ A244V SI6435
Text: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6435DQ
S-49534--Rev.
06-Oct-97
S-49534
A244V
SI6435
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Si6435DQ
Abstract: No abstract text available
Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6435DQ
S-47958--Rev.
15-Apr-96
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S-49534
Abstract: Si6435DQ
Text: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6435DQ
S-49534--Rev.
06-Oct-97
S-49534
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Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
SI9430DY equivalent
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-51361--Rev.
18-Dec-96
70513
51361
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
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Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-51360--Rev.
18-Dec-96
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Si64
Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-51361--Rev.
18-Dec-96
Si64
51361
Si94
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-51360--Rev.
18-Dec-96
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
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P-channel power mosfet SO-8 30V 9.2A 20
Abstract: 93C46 national S39421 injector MOSFET driver SILICON CONTROL RECTIFIER PIN DIAGRAM 100v P-Channel DPAK 93C46 tssop IRF7606 93C46 IRF7413
Text: Hot Swap Implementations with the Summit S39421 The S39421 is an economical general-purpose hot swap controller. Its functions allow the S39421 to be used in a wide variety of add-in-board hot swap applications, such as computer telephony and industrial control.
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S39421
S39421
P-channel power mosfet SO-8 30V 9.2A 20
93C46 national
injector MOSFET driver
SILICON CONTROL RECTIFIER PIN DIAGRAM
100v P-Channel DPAK
93C46 tssop
IRF7606
93C46
IRF7413
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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JFET TRANSISTOR REPLACEMENT GUIDE j201
Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone
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U3750BM
U3760MB-FN
U3760MB-SD
SSO-44
SD-40
U3800BM
U3810BM
U4030B
U4030B
JFET TRANSISTOR REPLACEMENT GUIDE j201
UA6538
DC motor speed control using 555 and ir sensor
U2740B-FP
UAA145
CQY80
U2840B
tcrt9050
TCDF1910
sod80 smd zener diode color band
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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S14435
Abstract: S14435DY S1443 70513 51361
Text: Temic SÌ9435DY Semiconductors P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y V D S V -30 r DS(on) (£2) I d (A ) 0.055 @ VGs = -10 V ±5.1 0.07 @ VGs = -6 V ±4.6 0.105 @ V<3s = -4.5 V ±3.6 Recom m ended upgrade: S14435DY or Si4953D Y Lower pro file ¡smaller size see Si6435DQ
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9435DY
S14435DY
Si4953D
Si6435DQ
S-51361--Rev.
18-Dec-96
S14435
S1443
70513
51361
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